he photomos (aqv45 ? , AQV454h) types * indicate the peak ac and dc values. note: for space reasons, the smd terminal shape indicator a and the package type indicator xand z are omitted from the seal. high sensitivity and low on-resistance. dip (1 form b) 6-pin type. he photomos (aqv45 ? , a qv454h) type i/o isolation output rating* part no. pac king quantity load voltage load current through hole terminal surface-mount terminal tube packing style tape and reel packing style tube tape and reel picked from the 1/2/3-pin side picked from the 4/5/6-pin side ac/dc 1,500 v ac 250 v 200 ma aqv453 aqv453a aqv453ax aqv453az 1 tube contains 50 pcs. 1 batch contains 500 pcs. 1,000 pcs. 400 v 150 ma AQV454 AQV454a AQV454ax AQV454az reinforced 5,000 v ac AQV454h AQV454ha AQV454hax AQV454haz testing (standard type)(standard type) mm inch 8.8 .346 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 1 2 3 6 5 4 features 1. form b (normally-closed) type has been realized thanks to the built-in mosfet processed by our proprietary method, dsd (double-diffused and selective doping) method. 2. controls low-level analog signals photomos relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. high sensitivity, low on resistance can control a maximum 0.15 a load current with a 5 ma input current. low on resistance of 16 ? (AQV454). stable operation because there are no metallic contact parts. 4. controls various types of load such as relays, motors, lamps and solenoids. 5. eliminates the need for a power supply to drive the power mosfet a power supply used to drive the power mosfet is unnecessary because of the b uilt-in optoelectronic device. this results in easy circuit design and small pc board area. 6. low thermal electromotive force (approx. 1 v) (basic insulation) 7. reinforced insulation 5,000 v type also available. more than 0.4 mm .016 inch internal insulation distance between inputs and outputs. conforms to iec950 (reinforced insulation). typical applications ? security equipment ? high-speed inspection machines ? measuring instruments ? telephone equipment ? sensors source electrode n C n + n + n + p + n + n + p + gate electrode passivation membrane cross section of the normally-closed type of power mos intermediate insulating membrane gate oxidation membrane drain electrode all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
he photomos (aqv45 ? , AQV454h) rating 2. electrical characteristics (ambient temperature: 25 c 77 f ) note: recommendable led forward current. standard type: i f = 5 ma reinforced type: i f = 5 to 10 ma *operate/reverse time item symbol type of connec- tion aqv453(a) AQV454(a) AQV454h(a) remarks input led operate (off) current typical i foff 1 ma 0.9 ma 1.4 ma i l = max. maximum 3 ma led reverse (on) current minimum i fon 0.4 ma i l = max. typical 0.9 ma 0.8 ma 1.3 ma led dropout voltage typical v f 1.25 v (1.14 v at i f =5 ma) i f = 50 ma maximum 1.5 v output on resistance typical r on a 5.5 ? 12.4 ? i f = 0 ma i l = max. within 1 s on time maximum 8 ? 16 ? typical r on b 2.7 ? 6.2 ? i f = 0 ma i l = max. within 1 s on time maximum 4 ? 8 ? typical r on c 1.4 ? 3.1 ? i f = 0 ma i l = max. within 1 s on time maximum 2 ? 4 ? off state leakage current maximum i leak 1 a1 a 10 a i f = 5 ma v l = max. tr ansfer characteristics switching speed operate (off) time* typical t off 1.52 ms 1.2 ms 1.8 ms i f = 0 ma ? 5 ma i l = max. maximum 3 ms 2.0 ms 3.0 ms reverse (on) time* typical t on 0.4 ms 0.36 ms 0.4 ms i f = 5 ma ? 0 ma i l = max. maximum 1 ms i/o capacitance typical c iso 1.3 pf f = 1 mhz v b = 0 v maximum 3 pf initial i/o isolation resistance minimum r iso 1,000 m ? 500 v dc 1. absolute maximum ratings (ambient temperature: 25 c 77 f ) item symbol type of connec- tion aqv453(a) AQV454(a) AQV454h(a) remarks input led forward current i f 50 ma led reverse voltage v r 5 v peak forward current i fp 1 a f = 100 hz, duty factor = 0.1% pow er dissipation p in 75 mw output load voltage (peak ac) v l 250 v 400 v continuous load current i l a 0.2 a 0.15 a a connection: peak ac, dc b,c connection: dc b 0.3 a 0.18 a c 0.4 a 0.25 a peak load current i peak 0.6 a 0.5 a a connection: 100 ms (1 shot), v l = dc pow er dissipation p out 360 mw total power dissipation p t 410 mw i/o isolation voltage v iso 1,500 v ac 5,000 v ac temperature limits operating t opr C40 c to +85 c C40 f to +185 f non-condensing at low temperatures storage t stg C40 c to +100 c C40 f to +212 f toff input output 10% 90% ton all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
he photomos (aqv45 ? , AQV454h) reference data 1. load current vs. ambient temperature characteristics allowable ambient temperature: C40 c to +85 c C40 f to +185 f type of connection: a 2. on resistance vs. ambient temperature characteristics measured portion: between terminals 4 and 6; led current: 0 ma; load voltage: max. (dc); continuous load current: max. (dc) 3. operate (off) time vs. ambient temperature characteristics led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 0 50 100 200 150 0204060 C20 8085100C40 ambient temperature, c load current, ma aqv453 AQV454(h) 0 8 10 12 14 C40 16 0 C20 20 40 60 8085 ambient temperature, c on resistance, ? AQV454(h) aqv453 0 2 3 C40 5 0 C20 20 40 60 8085 1 4 AQV454h ambient temperature, c operate (off) time, ms aqv453 AQV454 4. reverse (on) time vs. ambient temperature characteristics led current: 5 ma; load voltage: max. (dc); continuous load current: max. (dc) 5. led operate (off) current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) 6. led reverse (on) current vs. ambient temperature characteristics load voltage: max. (dc); continuous load current: max. (dc) 0 0.5 1.0 2.0 2.5 C40 0 C20 20 40 60 8085 AQV454h AQV454, aqv453 1.5 ambient temperature, c reverse (on) time, ms 0 1 2 3 4 C40 5 0 C20 20 40 60 8085 AQV454h ambient temperature, c led operate (off) current, ma AQV454 aqv453 0 1 2 3 4 C40 5 0 C20 20 40 60 80 AQV454h AQV454 aqv453 ambient temperature, c led reverse (on) current, ma 7. led dropout voltage vs. ambient temperature characteristics led current: 5 to 50 ma 8. current vs. voltage characteristics of output at mos portion measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f 9. off state leakage current vs. load voltage characteristics sample: AQV454; measured portion: between terminals 4 and 6; ambient temperature: 25 c 77 f 0 1.0 1.1 1.2 1.3 C40 0 C20 20 40 60 80 85 1.4 50ma 30ma 20ma 10ma 5ma 1.5 ambient temperature, c led dropout voltage, v C3 200 160 120 80 40 C200 C160 C120 C80 C40 0 aqv453 AQV454(h) 1 2 3 C2 C1 0 voltage, v current, ma 0 60 100 10 C3 10 C6 10 C9 10 C12 20 40 80 load voltage, v off state leakage current, a 10. operate (off) time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 11. reverse (on) time vs. led forward current characteristics measured portion: between terminals 4 and 6; load voltage: max. (dc); continuous load current: max. (dc); ambient temperature: 25 c 77 f 12. output capacitance vs. applied voltage characteristics measured portion: between terminals 4 and 6; frequency: 1 mhz; ambient temperature: 25 c 77 f 0 2 4 6 10 8 10 20 30 40 50 60 AQV454, aqv453 AQV454h led forward current, ma opperate (off) time, ms 0 0.2 0.4 0.8 0.6 10 20 30 40 1.0 50 60 AQV454h led forward current, ma reverse (on) time, ms AQV454, aqv453 applied voltage, v output capacitance, pf 0 100 400 300 200 10 20 30 40 50 0 aqv453 AQV454(h) all rights rese r v ed ?c opyright matsushita elect r ic w o r k s , ltd.
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